4.6 Article

Planar Hall effect in the quasi-one-dimensional topological superconductor TaSe3

Journal

PHYSICAL REVIEW B
Volume 104, Issue 15, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.104.155106

Keywords

-

Funding

  1. National Natural Science Foundation of China [U1932217, U1832141]
  2. Chinese Academy of Sciences' Large-Scale Scientific Facility [U1932217, U1832141]
  3. National Key Research and Development Program [2016YFA0300404]
  4. National Nature Science Foundation of China [11674326, 11874357]

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Researchers conducted a detailed analysis of the transport properties in quasi-1D TaSe3 and observed interesting phenomena, including electron-hole compensation, PHE, and anisotropic magnetoresistance. The origin of PHE in TaSe3 was suggested to be related to resistivity anisotropy induced by differences in field-induced anisotropic scattering. PHE offers an effective method to understand the relationship between electronic transport properties and the topological structure in quasi-1D TSC TaSe3.
A novel planar Hall effect (PHE) is induced by the chiral anomaly or nontrivial Berry curvature, which has been predicted in nonmagnetic Weyl/Dirac semimetals. Recent theories suggest such an effect exists in three-dimensional (3D) topological insulators even in the absence of chiral anomaly. In this paper, we present a detailed analysis of the transport properties in the quasi-1D TaSe3, a candidate of topological superconductor (TSC) predicted by the theorist. There are some interesting observations on TaSe3. (1) The electron-hole compensation has been confirmed by the Hall effect measurements around T-com similar to 30K, which accounts for the extremely large magnetoresistance in TaSe3. (2) The remarkable PHE and anisotropic magnetoresistance (AMR) are observed in TaSe3. Based on the detailed analysis of the PHE and AMR curves, the origin of PHE in TaSe3 is suggested to originate from the resistivity anisotropy induced by the difference of field-induced anisotropic scattering in surface Dirac fermions of various spins. (3) We observed the successive Fermi surface reconstruction induced by the temperature around T * similar to 50K, where the amplitude of intrinsic PHE drops sharply related to the suppression of the topological surface state. Meanwhile, the d rho(xx) (T)/dT curve presents a broad anomaly around T-peak similar to 70K, which can be explained as a possible charge-density wave associated with imperfect Fermi surface nesting. PHE provides an effective method to understand the relationship between the electronic transport properties and the topological structure in quasi-1D TSC TaSe3.

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