4.2 Article

Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC

Related references

Note: Only part of the references are listed.
Article Engineering, Electrical & Electronic

Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current

Wenhao Xiong et al.

Summary: This study demonstrates a β-Ga2O3 double-barrier Schottky barrier diode (DBSBD) with low turn-on voltage and low reverse leakage current by utilizing Ni and PtOx as the anode electrode and modulating the barrier height of PtOx-based diode through adjusting oxygen pressure during sputtering processes. The optimized DBSBD shows high forward current, low on-resistance, low turn-on voltage, and relatively low reverse leakage current compared to a Ni-SBD, attributed to the suppression of edge leakage current due to the double-barrier contact. The double-barrier design strategy provides a new device structure for advanced power electronics by balancing the forward and reverse characteristics in SBD.

IEEE ELECTRON DEVICE LETTERS (2021)

Article Chemistry, Multidisciplinary

Ultra-High Performance Amorphous Ga2O3 Photodetector Arrays for Solar-Blind Imaging

Yuan Qin et al.

Summary: This study focuses on ultrahigh-performance metal-semiconductor-metal (MSM) solar-blind photodetectors (SBPDs) based on post-annealed amorphous (a-) Ga2O3, demonstrating superhigh sensitivity and response speed, as well as ultrahigh photo-to-dark current ratio and specific detectivity, indicating practicality for applications in solar-blind imaging, environmental monitoring, artificial intelligence, and machine vision.

ADVANCED SCIENCE (2021)

Article Physics, Applied

Integration of polycrystalline Ga2O3 on diamond for thermal management

Zhe Cheng et al.

APPLIED PHYSICS LETTERS (2020)

Article Physics, Applied

Thickness-dependent thermal conductivity of mechanically exfoliated β-Ga2O3 thin films

Yingying Zhang et al.

APPLIED PHYSICS LETTERS (2020)

Article Materials Science, Multidisciplinary

Temperature-Dependent Electrical Characteristics of Ni/Au Vertical Schottky Barrier Diodes on β-Ga2O3 Epilayers

Hardhyan Sheoran et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)

Article Nanoscience & Nanotechnology

Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface

Jiajie Lin et al.

APL MATERIALS (2020)

Article Nanoscience & Nanotechnology

Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3 SiC Interfaces

Zhe Cheng et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

Article Engineering, Electrical & Electronic

Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga2O3

Wenshen Li et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

Article Engineering, Electrical & Electronic

Realization of wafer-scale single-crystalline GaN film on CMOS-compatible Si(100) substrate by ion-cutting technique

Hangning Shi et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2020)

Article Materials Science, Coatings & Films

Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy

Neeraj Nepal et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2020)

Article Engineering, Electrical & Electronic

Wafer-Scale Fabrication of 42° Rotated Y-Cut LiTaO3-on-Insulator (LTOI) Substrate for a SAW Resonator

Youquan Yan et al.

ACS APPLIED ELECTRONIC MATERIALS (2019)

Review Nanoscience & Nanotechnology

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao et al.

ADVANCED ELECTRONIC MATERIALS (2018)

Article Physics, Applied

Freestanding ultrathin single-crystalline SiC substrate by MeV H ion-slicing

Qi Jia et al.

APPLIED PHYSICS LETTERS (2018)

Review Physics, Applied

A review of Ga2O3 materials, processing, and devices

S. J. Pearton et al.

APPLIED PHYSICS REVIEWS (2018)

Article Nanoscience & Nanotechnology

Efficient ion-slicing of InP thin film for Si-based hetero-integration

Jiajie Lin et al.

NANOTECHNOLOGY (2018)

Article Physics, Applied

Three-dimensional anisotropic thermal conductivity tensor of single crystalline beta-Ga2O3

Puqing Jiang et al.

APPLIED PHYSICS LETTERS (2018)

Article Physics, Applied

Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

M. Slomski et al.

JOURNAL OF APPLIED PHYSICS (2017)

Article Physics, Applied

Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors

Shihyun Ahn et al.

APPLIED PHYSICS LETTERS (2016)

Article Engineering, Electrical & Electronic

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Huarui Sun et al.

IEEE ELECTRON DEVICE LETTERS (2016)

Article Chemistry, Physical

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

Janghyuk Kim et al.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2016)

Article Engineering, Electrical & Electronic

Recent progress in Ga2O3 power devices

Masataka Higashiwaki et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)

Article Physics, Applied

Anisotropic thermal conductivity in single crystal β-gallium oxide

Zhi Guo et al.

APPLIED PHYSICS LETTERS (2015)

Article Engineering, Electrical & Electronic

Temperature-dependent thermal conductivity in Mg-doped and undoped β-Ga2O3 bulk-crystals

M. Handwerg et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2015)