Charge Configuration Memory (CCM) device - a novel approach to memory

Computer technologies have advanced unimaginably over the last 70 years, mainly due to scaling of electrical components down to the nanometre regime and their consequential increase in density, speed and performance. Decrease in dimensions also brings about many unwanted side effects, such as increased leakage, heat dissipation and increased cost of production. However, it seems that one of the biggest factors limiting further progress in high-performance computing is the increasing difference in performance between processors and memory units, a so-called processor-memory gap. To increase the efficiency of memory devices, emerging alternative non-volatile memory (NVM) technologies could be introduced, promising high operational speed, low power consumption and high density. This review focuses on a conceptually unique non-volatile Charge Configuration Memory (CCM) device, which is based on resistive switching between different electronic states in a 1T-TaS 2 crystal. CCM demonstrates ultrafast switching speed <16 ps, very low switching energy (2.2 fJ/bit), very good endurance and a straightforward design. It operates at cryogenic temperatures, which makes it ideal for integration into emerging cryo-computing and other high-performance computing systems such as superconducting quantum computers.

Automated summary

Advances in computer technologies have been driven by scaling down electrical components to the nanometre regime, but this also comes with unwanted side effects. The increasing gap in performance between processors and memory units is a major factor limiting further progress in high-performance computing. Introducing emerging alternative non-volatile memory technologies could help improve memory device efficiency.