SELF-HEATING CMOS FLOW SENSOR

This paper reports a new design of polysilicon flow sensor fabricated by UMC 0.18 mu m CMOS MEMS foundry. Our self-heating design is different from the conventional one which has floating plate with resistive temperature detectors (RTDs) heated by another heater aside, and our self-heating RTD half-bridge is only 300 x 250 mu m(2) in chip size. This new design outputs a normalized sensitivity of 138 mu V/V/(m/s) within the speed range of 0-15 m/s. This sensitivity is 89% of Y.-K. Lee's work in IEEE MEMS 2020. The dummy specimen and the orientation-free wind tunnel tests also confirmed the sensor performance.

Automated summary

This paper presents a new design of polysilicon flow sensor fabricated by UMC 0.18 μm CMOS MEMS foundry, with self-heating design and high sensitivity, achieving 89% sensitivity of Y.-K. Lee's work in IEEE MEMS 2020 within the speed range of 0-15 m/s. Tests with dummy specimen and orientation-free wind tunnel confirmed the sensor performance.