Detailed loss analysis of 24.8% large-area screen-printed n-type solar cell with polysilicon passivating contact

Doped polysilicon-based passivating contacts are expected to be a key technology to enable higher efficiency in mass-produced silicon solar cells in coming years, with the world market share expected to increase almost 9-fold to 35% in 2031 The excellent carrier selectivity of passivated contacts enables low-resistance extraction of carriers without compromising surface passivation and has been instrumental in recent advances in high-efficiency solar cells. Here, we report on the application of phosphorus-doped polysilicon passivating contacts on large-area screen-printed n-type silicon solar cells, using industrially viable fabrication processes. A champion cell efficiency of 24.79% is reported, as independently measured by ISFH-CalTeC on a 163.75 x 163.75-mm solar cell. Detailed characterization and simulation are applied to investigate the primary losses and pathways for further improvement of the state-of-the-art industrial high-efficiency solar cell, revealing that the front-side boron-diffused region accounts for around 63% of the electrical losses.

Automated summary

Doped polysilicon-based passivating contacts are expected to play a key role in achieving higher efficiency in mass-produced silicon solar cells in the future, with the global market share projected to increase to 35% by 2031. By utilizing phosphorus-doped polysilicon passivating contacts on large-area screen-printed n-type silicon solar cells, a champion cell efficiency of 24.79% has been achieved, along with detailed characterization and simulation studies to identify primary losses and potential pathways for further improvement.