Journal
APPLIED SURFACE SCIENCE
Volume 570, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2021.151158
Keywords
Microwave annealing; AlN film; Atomic layer deposition (ALD); MOSC-HEMT
Categories
Funding
- National Natural Science Foundation of China [61874034, 62027818]
- Natural Science Founda-tion of Shanghai [18ZR1405000]
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A multi-functional microwave annealing process was proposed for high-performance GaN heterostructure devices, resulting in a lower threshold voltage hysteresis, smaller gate leakage, and larger current output.
A multi-functional microwave annealing (MWA) process was proposed for high-performance GaN heterostructure devices. By this means, an Al2O3/AlN/GaN MOS-channel high-electron-mobility transistor was fabricated. The MWA was performed on both the AlN insertion layer and electrode metals, enabling the formation of high-quality AlN/GaN interface and good ohmic contact at the same time. A better performance of lower threshold voltage hysteresis (more than 2 times lower), smaller gate leakage, and larger current output (similar to 1.7 times larger) was hence obtained.
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