Related references
Note: Only part of the references are listed.Memristor-Based Neural Network Circuit of Emotion Congruent Memory With Mental Fatigue and Emotion Inhibition
Junwei Sun et al.
IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS (2021)
Resistive switching materials for information processing
Zhongrui Wang et al.
NATURE REVIEWS MATERIALS (2020)
Addressing the sneak-path problem in crossbar RRAM devices using memristor-based one Schottky diode-one resistor array
Fatih Gul
RESULTS IN PHYSICS (2019)
Novel Selector-Induced Current-Limiting Effect through Asymmetry Control for High-Density One-Selector-One-Resistor Crossbar Arrays
Yumin Kim et al.
ADVANCED ELECTRONIC MATERIALS (2019)
Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device
Yu-Rim Jeon et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application
Ying-Chen Chen et al.
SCIENTIFIC REPORTS (2019)
Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current
Min-Hwi Kim et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2018)
Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory
Zhuo-Rui Wang et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Ni/Fe and Mg/Fe layered double hydroxides and their calcined derivatives: preparation, characterization and application on textile dyes removal
Rachid Elmoubarki et al.
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T (2017)
Phonon and electron contributions to the thermal conductivity of VNx epitaxial layers
Qiye Zheng et al.
PHYSICAL REVIEW MATERIALS (2017)
Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x
Sungjun Kim et al.
APPLIED PHYSICS LETTERS (2017)
Zr, ZrN and Zr/Al Thin Films Deposition Using Arc Evaporation and Annealing
J. Čyvienė et al.
ACTA PHYSICA POLONICA A (2016)
All ITO-based transparent resistive switching random access memory using oxygen doping method
Hee-Dong Kim et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2015)
Dynamic and structural stability of cubic vanadium nitride
A. B. Mei et al.
PHYSICAL REVIEW B (2015)
Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory
Yue Bai et al.
SCIENTIFIC REPORTS (2014)
TEAM: ThrEshold Adaptive Memristor Model
Shahar Kvatinsky et al.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS (2013)
Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector-One Resistor Crossbar Array
Chun-Li Lo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing
Hee-Dong Kim et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2013)
High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx, Structure for One Selector-One Resistor Arrays
Wootae Lee et al.
ACS NANO (2012)
Metal-Oxide RRAM
H. -S. Philip Wong et al.
PROCEEDINGS OF THE IEEE (2012)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
Properties of ZrNx films with x> 1 deposited by reactive radiofrequency magnetron sputtering
A. Rizzo et al.
THIN SOLID FILMS (2006)
Scaling constraints in nanoelectronic random-access memories
CJ Amsinck et al.
NANOTECHNOLOGY (2005)
Rapid thermal annealing effects on plasma deposited SiOx:H films
E San Andrés et al.
VACUUM (2002)
Share Paper
