Temperature Sensors Based on AlN/4H-SiC Diodes

This study report on the formation of AlN/SiC heterostructure Schottky diodes for use of temperature sensing applications enhance the sensitivity. We analyzed the sensitivity of the AlN/SiC Schottky diode sensor depend-ing on the annealing temperature. AlN/4H-SiC Schottky diodes were fabricated by depositing aluminum nitride (AlN) thin film on 4H/SiC by radio frequency sputtering. The forward bias electrical characteristics were deter-mined under DC bias (in the voltage range of 0-1.5 V). The ideality factor, barrier height, and sensitivity were derived through current-voltage-temperature (I-V-T) measurements in the temperature range of 300-500 K. The of the AlN/4H-SiC barrier diode from 2.5-5.0 mV/K.

Automated summary

This study focuses on the formation of AlN/SiC heterostructure Schottky diodes for temperature sensing applications to enhance sensitivity. The sensitivity of the AlN/SiC Schottky diode sensor was analyzed based on annealing temperature, with barrier diode sensitivity ranging from 2.5 to 5.0 mV/K. The fabricated AlN/4H-SiC Schottky diodes exhibited forward bias electrical characteristics under DC bias and were characterized for ideality factor, barrier height, and sensitivity through current-voltage-temperature measurements.