Journal
2021 FOURTH INTERNATIONAL WORKSHOP ON MOBILE TERAHERTZ SYSTEMS (IWMTS)
Volume -, Issue -, Pages -Publisher
IEEE
DOI: 10.1109/IWMTS51331.2021.9486794
Keywords
Triple barrier resonant tunneling diode (TB-RTD); InP; THz detector; on-chip antenna; NEP
Funding
- EU within the Innovative Training Network (Marie Sklodowska-Curie MSCA-ITN) in Terahertz Technologies (TeraApps Project) [765426]
- Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) [287022738-TRR196]
- EFRE/NRW Forschungsinfrastrukturen THz-IZ
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A broadband THz detector using a triple-barrier InP Resonant Tunneling Diode and a monolithically integrated circularly polarized spiral antenna was designed, fabricated, and measured at room temperature. The detector achieved high responsivity and low noise equivalent power in the 220-330 GHz band, making it suitable for various applications.
A broadband THz detector consisting of a triple-barrier InP Resonant Tunneling Diode (RTD) with a monolithically integrated circularly polarized spiral antenna is designed, fabricated, and measured at room temperature. A free space measurement setup is utilized for far-field characterization. The detector (evaluated at zero-bias) is illuminated by a chopped continuous wave signal in the 220-330 GHz band, and the direct detection scheme consists of a lock-in amplifier in voltage mode readout. The measured average responsivity Rv is in the range of 750 V/W with a peak of 900 V/W at 257.5 GHz, with the lowest calculated NEP of 2.5 pW/root Hz.
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