Quantum transport through a disordered array of Ge-vacancy defects in silicon

We demonstrate the possibility to functionalize silicon vacancies through single ion implantation of Ge atoms, forming stable GeV complexes, to achieve position control of the defects and electronic properties suitable for room temperature operations. The quantum transport-measurements, supported by theoretical calculations, evidences differences compared to conventional dopants, concerning the effect of disorder and temperature on the conductivity.

Automated summary

We demonstrate the functionalization of silicon vacancies through single ion implantation of Ge atoms, forming stable GeV complexes, for position control of defects and electronic properties suitable for room temperature operations. Quantum transport measurements, supported by theoretical calculations, show differences in conductivity effects of disorder and temperature compared to conventional dopants.