Graphene-based nano-devices: high spin Seebeck and pure spin photogalvanic effects

We investigate the magnetic, thermoelectric transport, and photogalvanic effect (PGE) properties of two nano-devices based on sawtooth edged graphene nanoribbons (SGNRs). It is found that a robust spin-semiconducting property exists in SGNRs. When SGNRs are arranged in a . . . (sic) . . configuration, a large spin Seebeck coefficient is obtained, indicating a high Seebeck effect under a temperature difference. In addition, we also propose a new spatial inversion symmetry nano-device, which is constructed by two head to head semi-infinite SGNRs in a . . . (sic) . . . configuration. The results show that spin-up and spin-down currents are generated by the PGE with opposite flowing directions and the same magnitude. As a result, only a finite pure spin current arises without an accompanying charge current. More importantly, the pure spin current is robustly induced by photons and is independent of the photon energy, polarization angle and the model of polarization (linear or elliptical polarization), which is attributed to the symmetry of the spatial inversion and anti-symmetry of the spin density inversion. The results presented here provide a useful insight into the real application of both spin caloritronics and photoelectric carbon-based nano-devices.

Automated summary

The study explores the properties of nano-devices based on sawtooth edged graphene nanoribbons, uncovering robust spin-semiconducting properties and a large spin Seebeck coefficient. A new nano-device is proposed which generates a pure spin current through the photogalvanic effect, independent of photon characteristics, due to the symmetry of spatial inversion and anti-symmetry of spin density inversion.