g-C3N4/ZnCdS heterojunction for efficient visible light-driven photocatalytic hydrogen production

To suppress the aggregation behavior caused by the high surface energy of quantum dots (QDs), ZnCdS QDs were grown in situ on a g-C3N4 support. During the growth process, the QDs tightly adhered to the support surface. The ZnCdS QDs were prepared by low-temperature sulfurization and cation exchange with a zeolitic imidazolate framework precursor under mild conditions. The heterojunction of g-C3N4/ZnCdS-2 (CN/ZCS-2, with a g-C3N4 to ZIF-8 ratio of 2.0) not only showed excellent optical absorption performance, abundant reactive sites, and a close contact interface but also effectively separated the photogenerated electrons and holes, which greatly improved its photocatalytic hydrogen production performance. Under visible light irradiation (wavelength > 420 nm) without a noble metal cocatalyst, the hydrogen evolution rate of the CN/ZCS-2 heterojunction reached 1467.23 mu mol g(-1) h(-1), and the durability and chemical stability were extraordinarily high.

Automated summary

By growing ZnCdS quantum dots in situ on a g-C3N4 support, the aggregation behavior caused by high surface energy was effectively suppressed. The heterojunction of ZnCdS and g-C3N4 showed excellent optical absorption, abundant reactive sites, and efficient separation of photogenerated electrons and holes, resulting in significantly improved photocatalytic hydrogen production performance.