Journal
IEEE ACCESS
Volume 9, Issue -, Pages 159541-159548Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/ACCESS.2021.3131819
Keywords
CMOS technology; millimeter-wave circuits; power amplifiers; transformers
Categories
Funding
- National Research Foundation of Korea (NRF) Grant by the Korean Government through the Ministry of Science, ICT and Future Planning (MSIP) [2019M3F6A1106118]
- Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea [20194030202320]
- National Research Foundation of Korea [2019M3F6A1106118] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A compact W-band power amplifier for automotive radar application was proposed in 65-nm CMOS technology, with efficient transformer-based matching networks. Operating at 1.3V, the implemented 77GHz PA achieved good performance, demonstrating high power density.
We present a compact W-band power amplifier (PA) for automotive radar application in 65-nm CMOS technology. The circuit adopts a pseudo-differential push-pull configuration based on transformers (TFs) which offer highly efficient and flexible matching networks with minimized area occupancy. We have set the optimal output resistance close to 50 Omega, design guidelines in sizing active devices for each stage, and the corresponding transformers were presented for optimal power efficiency based on an analysis of surrounding matching networks. Working under a supply voltage of 1.3-V, the implemented 77GHz PA achieved a 3-dB gain bandwidth of 9-GHz (72.5-81.5 GHz), a peak gain of 22.4 dB, a saturated power (P-s(at)) of 16.4 dBm, and a peak power-added efficiency (PAE) of 20.3%. The area for the core layout is only 0.05 mm(2), which demonstrates the highest power density among the recently reported W-band CMOS PAs.
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