Self-Powered Ultraviolet Photodetector Based on β-Ga2O3/WO3 NPs Heterojunction With Low Noise and High Visible Rejection

Self-powered ultraviolet (UV) photodetectors (PDs) have attracted numerous interests for high-performance and low power consumption, making wireless and independent operation possible. Herein, the solution processed tungsten oxide (WO3) nanoparticles (NPs) were employed to construct beta-Ga2O3/WO3 planar heterojunction PD. The formation of type-beta-Ga2O3/WO3 heterointerface generated typical photovoltaic effect enabling self-powered work manner. Importantly, the fabricated beta-Ga2O3/WO3 NPs PD demonstrated record low noise with dark current of 6.5 fA and prominent spectral selectivity with rejection ratio (R-265/R-400) of 5.3 x 10(4), as well as excellent photodetection properties with photo-to-dark current ratio of 6.4 x 10(5), ON/OFF switching ratio of 2.7 x 10(4), responsivity of 4.1 mA/W, detectivity of 9.0 x 10(12) Jones and rise/decay time of 168/171 ms at 0 V. Besides, the narrower bandgap and UVB spectral response of WO3 NPs extended the detectable wavelength to 310 nm realizing broadband photodetection. The low-cost manufacture process and high self-powered performances pave the way of beta-Ga2O3/WO3 NPs PD in next-generation nanodevices.

Automated summary

Self-powered ultraviolet photodetectors based on beta-Ga2O3/WO3 nanoparticles exhibit excellent photodetection properties with low noise, high photo-to-dark current ratio, and outstanding spectral selectivity, paving the way for next-generation nanodevices.