4.0 Article

Improved triethylamine sensing properties by designing an In2O3/ ZnO heterojunction

Journal

SENSORS AND ACTUATORS REPORTS
Volume 3, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.snr.2021.100064

Keywords

N-n heterojunction; Ultrasonic spray nozzle; Microwave-assisted hydrothermal; Volatile organic compounds; Chemoresistive sensor

Funding

  1. Sao Paulo Research Foundation - FAPESP [2020/06421-1, 2019/12345-9, 2018/00033-0, 2018/01258-5, 2017/01267-1, 2016/25267-8]
  2. Coordination for the Improvement of Higher Education Personnel - CAPES [001]
  3. National Council for Scientific and Technological Development - CNPq [308327/2018-7]

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The study investigated the impact of In2O3 nanoparticles on the VOC-sensing performance of ZnO twin-rods, with results showing that the In2O3/ZnO heterostructure exhibited higher selectivity and sensitivity towards TEA.
Sensors of volatile organic compounds (VOCs) play a vital role in environmental monitoring. Although much progress has been made to develop new sensing materials, it remains challenging to detect a particular VOC selectively and without the interference of humidity. Herein, we report the effect of In2O3 nanoparticles on the VOC-sensing performance of ZnO twin-rods. The VOC-sensing tests were carried out in dry air and at a relative humidity (RH) of 26, 59, and 98%. The results indicated that the In2O3/ZnO heterostructure exhibited an improved sensing performance to triethylamine (TEA) compared to ZnO. In dry air, the responses to 100 ppm of TEA at 350 degrees C were 60.2 for the In2O3/ZnO heterostructure and 39.2 for pure ZnO. In2O3/ZnO even exhibited a high response of 6.2 to 1 ppm of TEA. Moreover, In2O3/ZnO exhibited a response to TEA up to 46.2 times higher than those of the other VOCs, indicating excellent selectivity. At 98% RH, the In2O3/ZnO heterostructure still had a high sensitivity to TEA, showing a response of 21.2 to 100 ppm of TEA with a response time of 1 s. The improved TEA-sensing performance of the In2O3/ZnO heterostructure can be attributed to the formation of the n-n heterojunction.

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