Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 9, Issue -, Pages 1151-1154Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2021.3108854
Keywords
MOSFET; Temperature measurement; Temperature; Gallium arsenide; Silicon-on-insulator; Transistors; Logic gates; Nanowire; MOSFET; subthreshold swing
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Funding
- Japan Society for the Promotion of Science (JSPS) KAKENHI [JP19H00754]
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This study examines the subthreshold swing (SS) in a silicon gate-all-around (GAA) nanowire MOSFET with zero body factor and a fully depleted (FD) SOI MOSFET at temperatures ranging from room temperature (RT) down to 4 K. The research finds that the SS of both transistors decreases in proportion to temperature, but starts to saturate below 18K, similar to transistors with non-zero body factor as seen in literature. It indicates that the body factor is not related to the SS saturation phenomena at very low temperatures.
Subthreshold swing (SS) in a silicon gate-all-around (GAA) nanowire MOSFET with zero body factor is examined from room temperature (RT) down to 4 K. A fully depleted (FD) SOI MOSFET is also evaluated. The values of SS of both transistors decrease in proportional to temperature (T) but start to saturate below 18K, similar to transistors with non-zero body factor in the literature, indicating that the body factor is not related to the SS saturation phenomena at very low temperatures.
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