Low-symmetry topological materials for large charge-to-spin interconversion: The case of transition metal dichalcogenide monolayers

The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments on few-layer MoTe2 and WTe2 showed that the reduced symmetry of these strong spin-orbit coupling materials enables a new form of canted spin Hall effect, characterized by concurrent in-plane and out-of-plane spin polarizations. Here, through quantum transport calculations on realistic device geometries, including disorder, we predict a very large gate-tunable SHE figure of merit lambda(s)theta(xy) approximate to 1-50 nm in MoTe2 and WTe2 monolayers that significantly exceeds values of conventional SHE materials. This stems from a concurrent long spin diffusion length (lambda(s)) and charge-to-spin interconversion efficiency as large as theta(xy) approximate to 80%, originating from momentum-invariant (persistent) spin textures together with large spin Berry curvature along the Fermi contour, respectively. Generalization to other materials and specific guidelines for unambiguous experimental confirmation are proposed, paving the way toward exploiting such phenomena in spintronic devices. These findings vividly emphasize how crystal symmetry and electronic topology can govern the intrinsic SHE and spin relaxation, and how they may be exploited to broaden the range and efficiency of spintronic materials and functionalities.

Automated summary

This study reveals a novel canted spin Hall effect in few-layer MoTe2 and WTe2 materials, characterized by in-plane and out-of-plane spin polarizations. The decreased symmetry of these materials leads to a large gate-tunable figure of merit for the spin Hall effect, showing potential for applications in spintronic devices.