Negative nonlocal vicinity resistance of viscous flow in a two-dimensional electron system

We perform a quantum transport study of Hall viscous liquid in multiterminal narrow Hallbar devices of a high-mobility two-dimensional electron system (2DES) in GaAs/AlGaAs heterostructure. In the nonlocal transport measurements of vicinity geometry under magnetic fields (B), we observe that the absolute negative magnetoresistance (R-xx) value (R-min < 0) and the corresponding magnetic field (B-min) are both inversely proportional to the adjacent Hallbar arm distance (L). The occurrence of negative resistance is dependent on the characteristic lengths of the devices and the electron flow direction under B-fields. The minimal resistance R-min occurs when the cyclotron radius R-c approximates L. Multiples of high-order (nth-order) Rmmn's persist from low to high magnetic fields in a large sample size of L = 5 mu m. Our experimental study reveals the transport behaviors in the vicinity regime, where the negative resistances depict viscous electronic flows in the high-mobility 2DES. In addition, the negative and high-order minimal resistances expand to a magnetic field of several kGs.

Automated summary

In our quantum transport study of Hall viscous liquid in high-mobility 2DES, we found that the occurrence of negative resistance is inversely proportional to the adjacent Hallbar arm distance, and is dependent on the characteristic lengths of the devices and electron flow direction under magnetic fields. Additionally, high-order minimal resistances persist in a large sample size of L = 5 μm, expanding to magnetic fields of several kGs.