4.6 Article

Impact of La Concentration on Ferroelectricity of La-Doped HfO2 Epitaxial Thin Films

Journal

ACS APPLIED ELECTRONIC MATERIALS
Volume 3, Issue 11, Pages 4809-4816

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.1c00672

Keywords

ferroelectric HfO2; ferroelectric oxides; epitaxial HfO2; epitaxial oxides on silicon; thin films

Funding

  1. Spanish Ministry of Science and Innovation, through the Severo Ochoa FUNFUTURE [CEX2019-000917-S]
  2. AEI/FEDER, EU [PID2020-112548RB-I00, PID2019-107727RB-I00, MAT2017-85232-R]
  3. CSIC through the i-LINK [LINKA20338]
  4. Generalitat de Catalunya [2017 SGR 1377]
  5. 2020 Leonardo Grant for Researchers and Cultural Creators, BBVA Foundation
  6. Ramon y Cajal Contract [RYC-2017-22531]
  7. China Scholarship Council (CSC) [201807000104, 201906050014]
  8. European Commission through the project TIPS [H2020-ICT-02-2014-1-644453]
  9. French national research agency (ANR) through the project DIAMWAFEL [ANR-15-CE08-0034]
  10. French national research agency (ANR) through the project LILIT [ANR16-CE24-0022]
  11. French national research agency (ANR) through the project MITO [ANR-17-CE05-0018]
  12. CNRS through the MITI interdisciplinary programs (project NOTE)
  13. Agence Nationale de la Recherche (ANR) [ANR-17-CE05-0018] Funding Source: Agence Nationale de la Recherche (ANR)

Ask authors/readers for more resources

Epitaxial thin films of HfO2 doped with La have been grown on SrTiO3(001) and Si(001), and the impact of La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2-5 at. % La doping exhibit the least amount of paraelectric monoclinic and cubic phases, highest polarization, and a remanent polarization above 20 mu C/cm(2). La concentration has a significant effect on the coercive field, which decreases with increasing La content. High polarization, retention, and endurance of at least 10(10) cycles are achieved in 5 at. % La-doped films.
Epitaxial thin films of HfO2 doped with La have been grown on SrTiO3(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2-5 at. % La doping present the least amount of paraelectric monoclinic and cubic phases and exhibit the highest polarization, having a remanent polarization above 20 mu C/cm(2). The dopant concentration results in an important effect on the coercive field, which is reduced with increasing La content. Combined high polarization, high retention, and high endurance of at least 10(10) cycles is obtained in 5 at. % La-doped films.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available