Journal
2021 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW)
Volume -, Issue -, Pages 57-60Publisher
IEEE
DOI: 10.1109/IIRW53245.2021.9635612
Keywords
charging; high-k; hysteresis; traps
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The investigation focused on charging damage due to gate antennae on 65nm NMOS devices with a thick 9.5nm HfOx gate dielectric. It was found that charging caused different trap characteristics in plate-antenna and control transistors.
Charging damage due to gate antennae is investigated on 65nm NMOS devices with a thick 9.5nm HfOx gate dielectric. The hysteresis and time sampling of the channel current are considered to evaluate this degradation. Cycles of double-ramp sweeps and reset pulses demonstrate that charging causes different trap characteristics in plate-antenna and control transistors.
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