Journal
ENERGY & ENVIRONMENTAL SCIENCE
Volume 10, Issue 11, Pages 2401-2410Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7ee01405h
Keywords
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Funding
- National Natural Science Foundation of China [21203053, 21271064, 61306016, 21603058, 51702085]
- Joint Talent Cultivation Funds of NSFC-HN [U1204214, U1604138]
- Innovation Research Team of Science and Technology in Henan province [17IRTSTHN028]
- Program for Changjiang Scholars and Innovative Research Team in University [PCS IRT1126]
- Young Key Teacher Foundation of Henan Province's Universities [2015GGJS-022]
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Although the substitution of Cu by Ag to suppress Cu-Zn defects offers several advantages in overcoming the large open-circuit voltage (V-oc) deficit for Cu2ZnSn(S,Se)(4) (CZTSSe) solar cells, an excellent performance has not been achieved to date primarily due to the Fermi level pinning at the CdS/absorber interface and large recombination at the absorber/Mo interface. Herein, we developed a composition grading strategy to achieve a V-shaped Ag-graded structure with a higher Ag content on both the back and front surfaces of the (Cu,Ag)(2)ZnSn(S,Se)(4) (CAZTSSe) layer. The key advantages of this Ag-graded structure are as follows: the higher content towards the CdS/absorber interface can create weak n-type donor defects and retard Fermi level pinning, whereas the lower content at the interlayer maintains the conductivity and light absorption; moreover, the other higher content towards Mo back contact can effectively suppress the recombination and improve the utilization of long-wave incident light. By appropriately adjusting the Ag gradient, we demonstrated a significant increase in Voc, and an unexpected conversion efficiency of 11.2% was achieved. This is the highest efficiency achieved to date for Ag-substituted CZTSSe solar cells, and the result supports a new aspect that synthesis of a composition-graded CAZTSSe absorber has great potential for future research.
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