Integration of β-Ga2O3 on Si (100) for Lateral Schottky Barrier Diodes

Gallium Oxide (Ga2O3) is an emerging semiconductor for next-generation power electronics. Ga(2)O(3 )has been used as a substrate to deposit Ga2O3 thin film in most of the previously reported works. However, Ga2O3 substrate is costly which makes the technology too expensive. Thus, the cost-effective integration of Ga2O3 with the existing silicon technology is the primary motivation for the present research. In this context, the beta-Ga2O3 film has been deposited on Si (10 0) substrate using pulsed laser deposition. XRD pattern of the deposited film shows the single crystalline nature with beta-phase of Ga2O3. FESEM results confirm the film surface is smooth and uniform. Fabricated Schottky barrier diodes (SBDs) show good device performance with significantly high breakdown voltage and low ideality factor. Baliga's figure of merit (V-BR(2)/RoN) has been computed to be 0.021 MWcm(-2). The present research has evaluated the feasibility of cost-effective integration of beta-Ga2O3 with well-established technology Si and it would provide a new research opportunity of beta-Ga2O3 on Si with potential commercial applications as well as challenges to overcome for high-performance power devices soon.

Automated summary

The research focuses on the feasibility of cost-effective integration of beta-Ga2O3 with well-established technology Si, showing promising potential for commercial applications and challenges for high-performance power devices.