3.8 Proceedings Paper

Comparative Analysis of Si , SiC and GaN Field-Effect Transistors for DC Solid-State Power Controllers in More Electric Aircraft

Publisher

IEEE
DOI: 10.1109/ECCE-Asia49820.2021.9479031

Keywords

Solid state power controller; de circuit breaker; de system protection; more electric aircraft; wide bandgap semiconductor devices

Funding

  1. National Research Foundation (NRF) of Singapore
  2. Rolls-Royce Singapore Pte. Ltd
  3. Nanyang Technological University, Singapore

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This paper compares Si, SiC, and GaN field-effect transistors for fault isolation in aerospace applications, evaluating their performance and characteristics under steady-state and transient conditions. Device selection is crucial for ensuring the reliability and performance of the solid-slate power controller (SSPC).
A de solid-slate power controller (SSPC) is a semiconductor-based circuit breaker used for fault isolation in aerospace applications. Device selection is important to ensure the reliability and performance of the SSPC. In this paper, Si, SIC, and GaN field-effect transistors are compared under steady-stale and transient conditions. Experimental results are presented to evaluate the performance and characteristics.

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