3.8 Proceedings Paper

Laser-structured ZnO/p-Si Photodetector with Enhanced and Broadband Responsivity

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IEEE

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Funding

  1. Operational Programme Competitiveness, Entrepreneurship and Innovation (NSRF) [MIS 5002409]
  2. European Union (European Regional Development Fund)
  3. Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) [GrK1952/2]

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ZnO/p-Si photodetectors developed by ALD deposition of ZnO thin films on laser-microstructured Si exhibit high sensitivity and broadband operation (UV-Vis-NIR) due to increased specific surface area at the heterojunction and enhanced light absorption.
We develop ZnO/p-Si photodetectors by ALD deposition of ZnO thin films on laser-microstructured Si, which demonstrate high sensitivity and broadband operation (UV-Vis-NIR), due to increased specific surface area of the heterojunction and increased light absorption. (C) 2021 The Author(s)

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