Journal
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
Volume -, Issue -, Pages -Publisher
IEEE
Keywords
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Funding
- NSF [ECCS 18-09946]
- Office of Naval Research (ONR)
- ZJUI
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In this study, photo-enhanced metal-assisted chemical etching was demonstrated on homoepitaxial n-UaN on HVPE GaN substrates. The etch rate achieved was comparable to or better than using RIE, with no degradation in band-edge emission observed.
We demonstrate doping and growth dependent photo-enhanced metal -assisted chemical etching of homoepitaxial n-UaN on HVPE GaN substrates. Etch rate is comparable to or better than using RIE and there is no degradation of band-edge emission.
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