Journal
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
Volume -, Issue -, Pages -Publisher
IEEE
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Funding
- Defense Threat Reduction Agency (DTRA) [HDTRA1-16-1-0025]
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An optoelectronic readout method based on the plasmon drag effect for reading the state of STT-RAM cells is proposed, which can achieve up to 29.6 Gbit/sec readout speed according to simulations.
An optoelectronic readout method for reading the state of STT-RAM cells based on plasmon drag effect is proposed. Our simulations show that the proposed scheme can achieve up to 29.6 Gbit/sec readout speed. (C) 2021 The Author(s)
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