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2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
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IEEE
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The study presents silicon nitride waveguide-integrated silicon lateral p-i-n photodiodes with high responsivity and external quantum efficiency.
We demonstrate silicon nitride waveguide-integrated silicon lateral p-i-n photodiodes at lambda=488nm. A 50-mu m long device exhibits a dark current of 178pA at -5V, a responsivity of 0.31 +/- 0.01A/W, and an external quantum efficiency of similar to 78%. (C) 2021 The Author(s)
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