Wafer-level fabrication of nanocones structures by UV-nanoimprint and cryogenic deep reactive ion process

UV-nanoimprint lithography is currently seen like an alternative to the classical lithographic techniques (electron beam or optical lithography) for large scale patterning in industrial applications. The present study is oriented on the fabrication of silicon nano-cones (pyramids) by using the UV-nanoimprint technique with polymeric stamps and deep reactive ion etching using the UV-cured resist as etching mask at cryogenic temperatures. The results show that the resist can act successfully as etching mask for the cryogenic silicon etching process.

Automated summary

The study focuses on fabricating silicon nano-cones (pyramids) using UV-nanoimprint lithography with polymeric stamps and deep reactive ion etching at cryogenic temperatures. Results demonstrate that the resist can effectively act as an etching mask for cryogenic silicon etching.