Journal
2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)
Volume -, Issue -, Pages 896-899Publisher
IEEE
DOI: 10.1109/IMS19712.2021.9574993
Keywords
Cryogenic LNA; SiGe HBT; Low power; Noise Modeling
Funding
- National Aeronautics and Space Administration (NASA) through Jet Propulsion Laboratory (JPL), California Institute of Technology
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An integrated cryogenic LNA using SiGe HBT technology has been successfully designed and implemented, achieving a low noise temperature and high gain with low power consumption. This LNA outperforms previous broadband SiGe cryogenic LNAs in terms of noise performance and power efficiency.
A 0.1-3 GHz integrated cryogenic LNA exploiting SiGe HBT has been designed and implemented. The cryogenic performance of the HBT technology is investigated and a bias dependent small-signal noise model is extracted. An amplifier achieving a 4.6K average noise temperature and 30.5 dB average gain over the desired frequency band is designed and measured at a physical temperature of 15 K. The amplifier consumes just 1 mW of dc power, which is about an order of magnitude lower than previous broadband SiGe cryogenic LNAs.
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