Investigation of optoelectronic properties of AgIn1-xGaxY2 (Y = Se, Te) semiconductors

The electronic structure and optical properties of AgIn1-xGaxY2 (Y = Se, Te) are investigated using first-principles calculations based on density functional theory. Both the local density approximation (LDA) and generalized gradient approximation (GGA) are employed in the calculation. The crystal structure of ternary semiconductors is the tetragonal chalcopyrite structure with space group I (4) over bar 2d. The lattice parameters a(angstrom) and c(angstrom) are found to vary with the change in Ga composition. The energy gap across the Fermi level in the density of states plots shows that these materials are semiconductors. To compute accurate energy gap values, the LDA + U method is adopted. The calculated elastic constants indicate that these compounds are mechanically stable at normal pressure. The semiconducting nature of these materials may prove their applications in solar cells and photovoltaic absorbers. The optical parameters such as dielectric function, electron energy loss function, refractive index and reflectivity are computed.

Automated summary

The electronic structure and optical properties of AgIn1-xGaxY2 (Y = Se, Te) were investigated using density functional theory, showing that these materials are semiconductors with mechanical stability and potential applications in solar cells and photovoltaic absorbers. Optial parameter calculations were also conducted.