Journal
ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING
Volume 47, Issue 6, Pages 7541-7549Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s13369-021-06218-x
Keywords
Hafnium oxide; Dc magnetron sputtering; Thermal oxidation; Stoichiometry; Crystal structure; Optical band gap
Categories
Funding
- University Grants Commission, New Delhi
- UGC-BSR-RFSMS Junior Research Fellowship
- University Grants Commission
- UGC-BSR Faculty Fellowship
Ask authors/readers for more resources
Thermal oxidation at different temperatures significantly affects the stoichiometry, crystallographic structure, and electrical and optical properties of magnetron-sputtered hafnium films. X-ray photoelectron spectroscopy and EDAX analysis confirm the chemical composition of the films. Increasing oxidation temperature improves the optical properties of HfO2 films.
Thermal oxidation at various temperatures on magnetron sputtered hafnium films shown significant effect on stoichiometry, crystallographic structure and electrical and optical properties. X-ray photoelectron spectroscopy confirms the stoichiometry of HfO2 films by showing the relevant shift in the core level binding energies of hafnium and oxygen after increasing the oxidation temperature to 600 degrees C. The EDAX analysis also confirmed the required composition of HfO2 films. The presence of monoclinic HfO2 structure was identified by XRD for the films oxidized at 600 degrees C. The interface quality at HfO2/Si stacks was improved as a function of oxidation temperature. The optical band gap and the refractive index of the HfO2 films increased with increase of oxidation temperature.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available