4.7 Review

Making clean electrical contacts on 2D transition metal dichalcogenides

Journal

NATURE REVIEWS PHYSICS
Volume 4, Issue 2, Pages 101-112

Publisher

NATURE PORTFOLIO
DOI: 10.1038/s42254-021-00389-0

Keywords

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Funding

  1. Royal Society Wolfson Research Merit Award [WRM\FT\180009]
  2. Leverhulme Trust [RPG-2019-227]
  3. EPSRC [EP/T026200/1, EP/T001038/1]

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A key challenge in fabricating devices out of 2D materials is making good electrical contact, especially for TMDs. Lack of high-quality, low-contact-resistance P-type and N-type contacts on TMDs has limited progress towards next-generation low-power devices. This Expert Recommendation provides strategies for making clean van der Waals contacts on monolayered TMD semiconductors and discusses prospects for achieving quantum conductance.
A key challenge in fabricating devices out of 2D materials is in making good electrical contact. This Expert Recommendation discusses the physics of electrical contacts and provides tips on improving contact quality. 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have emerged as highly promising for new electronic technologies. However, a key challenge in fabricating devices out of 2D semiconductors is the need for ultra-clean contacts with resistances approaching the quantum limit. The lack of high-quality, low-contact-resistance P-type and N-type contacts on 2D TMDs has limited progress towards the next generation of low-power devices, such as the tunnel field-effect transistors. In this Expert Recommendation, we summarize strategies and provide guidance for making clean van der Waals contacts on monolayered TMD semiconductors. We also discuss the physics of contacts in 2D semiconductors and prospects for achieving quantum conductance.

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