Journal
NANOSCALE RESEARCH LETTERS
Volume 17, Issue 1, Pages -Publisher
SPRINGER
DOI: 10.1186/s11671-021-03645-5
Keywords
Extreme ultraviolet (EUV); Detectors; FinFET CMOS technologies
Funding
- Taiwan Semiconductor Manufacturing Company (TSMC)
- Ministry of Science and Technology (MOST), Taiwan [MOST 110-2622-8-007-018]
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This article demonstrates an on-wafer micro-detector for in situ detection of EUV with features of FinFET CMOS compatibility, 1 T pixel, and battery-less sensing. The micro-detectors enable high spatial resolution and the detection results can be stored and read offline. It is crucial for optimizing lithographic processes in advanced technologies such as the 5 nm FinFET.
An on-wafer micro-detector for in situ EUV (wavelength of 13.5 nm) detection featuring FinFET CMOS compatibility, 1 T pixel and battery-less sensing is demonstrated. Moreover, the detection results can be written in the in-pixel storage node for days, enabling off-line and non-destructive reading. The high spatial resolution micro-detectors can be used to extract the actual parameters of the incident EUV on wafers, including light intensity, exposure time and energy, key to optimization of lithographic processes in 5 nm FinFET technology and beyond.
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