Embedded Micro-detectors for EUV Exposure Control in FinFET CMOS Technology

An on-wafer micro-detector for in situ EUV (wavelength of 13.5 nm) detection featuring FinFET CMOS compatibility, 1 T pixel and battery-less sensing is demonstrated. Moreover, the detection results can be written in the in-pixel storage node for days, enabling off-line and non-destructive reading. The high spatial resolution micro-detectors can be used to extract the actual parameters of the incident EUV on wafers, including light intensity, exposure time and energy, key to optimization of lithographic processes in 5 nm FinFET technology and beyond.

Automated summary

This article demonstrates an on-wafer micro-detector for in situ detection of EUV with features of FinFET CMOS compatibility, 1 T pixel, and battery-less sensing. The micro-detectors enable high spatial resolution and the detection results can be stored and read offline. It is crucial for optimizing lithographic processes in advanced technologies such as the 5 nm FinFET.