Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses

The asymmetric resistive memory device can be more suitable to reduce the crosstalk effect in a crossbar array. Similarly, this work focused on the material and design concept to achieve a one-directional engineered resistive switching memory device to reduce crosstalk effect for electronic synapses. The pulsed modulated DC sputtered crystalline GaN heterojunction with ITO/ZnO Schottky diode, resulting in one-directional digital resistive switching. The DC sputtered polycrystalline GaN is used on top of the ITO/ZnO Schottky barrier to achieve asymmetric multistate resistive switching behavior. The synaptic operation helps to investigate the stable synaptic spike-rate-dependent plasticity (SRDP), spike-timing-dependent plasticity (STDP), and long-term potentiation/depression (LTP/LTD). The weight change of the device was evaluated by the Modified National Institute of Standards and Technology (MNIST) image recognition technique at the system-level neural network. The simulation part deepens the concept that an asymmetric neuromorphic device can help reduce the crosstalk effect in a crossbar array to implement AI inference applications.

Automated summary

This study focuses on the material and design concept to achieve a one-directional engineered resistive switching memory device to reduce crosstalk effect for electronic synapses. The asymmetric multistate resistive switching behavior and synaptic spike-rate-dependent plasticity and spike-timing-dependent plasticity were validated through simulation and experiments.