Efficient infrared sunlight absorbers based on gold-covered, inverted silicon pyramid arrays

The transparency of silicon in the infrared region enables the design of nano/microstructures for implementation in devices to harvest the infrared (IR) part of the solar spectrum. Herein we report a strategy that uses arrays of inverted silicon pyramids covered with a thin gold film, which exhibit substantial light absorption in the infrared spectral range (below the gap of Si). The absorption stems from the resonant excitation at infrared wavelengths of surface-plasmon polaritons at the metal/dielectric interface mainly by tuning size and separation of the inverted pyramids. The array-parameter optimization proceeded by iteration of the calculation and measurement of the infrared response using finite difference time-domain simulations and Fourier-transform IR spectroscopy, respectively. We analyse the calculated near-field distributions specifically looking for the presence of hot spots, i.e. nano-sized regions of very high concentration of the electronic charge and strong electromagnetic field enhancement, and discuss their potential for hot-electron generation. We show two fabrication routes for this kind of metal/silicon metamaterial either by photolithography or scalable nanoimprint techniques for a seamless integration in optoelectronic fabrication processes.

Automated summary

The strategy utilizing arrays of inverted silicon pyramids covered with thin gold film achieves substantial light absorption in the infrared spectral range. Resonant excitation at infrared wavelengths is achieved by tuning the size and separation of the inverted pyramids. Two fabrication routes for this kind of metal/silicon metamaterial are shown, either by photolithography or scalable nanoimprint techniques.