Journal
SCIENCE ADVANCES
Volume 2, Issue 7, Pages -Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.1600067
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Funding
- Australian Research Council [DP140102581]
- Linkage Infrastructure, Equipment and Facilities [LE100100081, LE110100099]
- University of Wollongong through a University Research Council Small Grant
- Chinese Academy of Sciences [1G2009312311750101]
- Fundamental Research Funds for the Central Universities of China [DUT16LAB01]
- National Natural Science Foundation of China [11134005, 11375228, 11574040, 11575227]
- Australian Research Council [LE100100081, LE110100099] Funding Source: Australian Research Council
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Silicene is a monolayer allotrope of silicon atoms arranged in a honeycomb structure with massless Dirac fermion characteristics similar to graphene. It merits development of silicon-based multifunctional nanoelectronic and spin-tronic devices operated at room temperature because of strong spin-orbit coupling. Nevertheless, until now, silicene could only be epitaxially grown on conductive substrates. The strong silicene-substrate interaction may depress its superior electronic properties. We report a quasi-freestanding silicene layer that has been successfully obtained through oxidization of bilayer silicene on the Ag(111) surface. The oxygen atoms intercalate into the underlayer of silicene, resulting in isolation of the top layer of silicene from the substrate. In consequence, the top layer of silicene exhibits the signature of a 1 x 1 honeycomb lattice and hosts massless Dirac fermions because of much less interaction with the substrate. Furthermore, the oxidized silicon buffer layer is expected to serve as an ideal dielectric layer for electric gating in electronic devices. These findings are relevant for the future design and application of silicene-based
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