Nano-scale BN interface for ultra-stable and wide temperature range tolerable Zn anode

Aqueous Zn-based energy storage device (ZESD) is a promising candidate for large-scale energy storage applications due to its significant merits like low cost, inherent safety, and environmental benignity. However, one shortcoming of ZESDs is the performance deficiency of pristine Zn anode caused by detrimental dendrite formation and side reactions. In this work, a novel boron nitride nano-scale interface was established for ultra-stable and wide temperature range tolerable anode (BN@Zn) by a scalable magnetron sputtering technique. The as-introduced BN layers afford enhanced Zn deposition kinetics for a wide temperature application range from -20 to 60 degrees C and effectively mitigated dendritic growth, which were ascribed to the strong interlayer bonds and uniform active sites as demonstrated by both experimental and density functional theory research results. Thus, the ultra-thin BN interface could significantly improve the reaction kinetics and electrochemical stability of Zn anode, providing a new perspective towards the advanced ZESDs.

Automated summary

Aqueous Zn-based energy storage devices (ZESDs) are considered promising candidates for large-scale energy storage applications due to their low cost, inherent safety, and environmental friendliness. However, one drawback of ZESDs is the inadequate performance of pristine Zn anodes caused by detrimental dendrite formation and side reactions. In this work, a novel boron nitride nano-scale interface (BN@Zn) was established for an ultra-stable and wide temperature range tolerant anode. The introduction of BN layers enhanced the Zn deposition kinetics for a wide temperature application range and effectively mitigated dendritic growth, resulting in improved reaction kinetics and electrochemical stability of the Zn anode.