Journal
PHYSICAL REVIEW B
Volume 105, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.105.085111
Keywords
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Funding
- National Science Foundation [DMR-1926004]
- Center for Computational Study of Excited-State Phenomena in Energy Materials (C2SEPEM) at Lawrence Berkeley National Laboratory - U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division, Computation [DE-AC02-05CH11231]
- Natural Sciences and Engineering Research Council of Canada [RGPIN-2019-07149]
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This article discusses the effects of the electron-phonon interaction on optical excitations and presents a practical expression for the exciton-phonon self-energy. This expression describes the temperature dependence of the optical transition energies and their lifetime broadening resulting from the interaction between excitons and phonons.
The effects of the electron-phonon interaction on optical excitations can be understood in terms of excitonphonon coupling and require a careful treatment in low-dimensional materials with strongly bound excitons or strong electron-hole interaction in general. Through phonon absorption and emission processes, the optically accessible excitons are scattered into otherwise optically dark finite-momentum exciton states. We derive a practical expression for the phonon-induced term of the exciton self-energy (denoted as the exciton-phonon self-energy) that gives the temperature dependence of the optical transition energies and their lifetime broadening resulting from the exciton's interaction with the phonons. We illustrate this theory on a two-dimensional model and show that our expression for the exciton-phonon self-energy differs qualitatively from previous expressions found in the literature that neglect the exciton binding or electron-hole correlations.
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