4.1 Article

Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting

Journal

STAR PROTOCOLS
Volume 3, Issue 1, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.xpro.2021.101015

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Funding

  1. Korea Institute of Energy Technology Evaluation and Planning (KETEP)
  2. Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea [NRF-2017M1A2A2087325]
  3. Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) - Ministry of Science and ICT [AG324321R]
  4. Gumi Core Components and Materials Technology Development Program of the Gumi Regional Government
  5. Australian Renewable Energy Agency (ARENA)
  6. Australian Research Council (ARC)
  7. [20183010014320]

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This article presents a protocol for preparing thin semiconductors and describes their application in photoelectrochemical water-splitting for hydrogen fuel production.
Thin semiconductors attract huge interest due to their cost-effective, flexible, lightweight, and semi-transparent properties. Here, we present a protocol on the preparation of thin semiconductor via controlled crack-assisted layer exfoli-ation technique. The protocol details the fabrication procedure for producing thin monocrystalline semiconductors with thicknesses in the range of a few tens of micrometers from thick donor substrates. In addition, we describe proof-of-concept application of the thin semiconductors for photoelectrochem-ical water-splitting to produce hydrogen fuel.For complete details on the use and execution of this protocol, please refer to Lee et al. (2021).

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