Two-dimensional ferroelectric MoS2/Ga2O3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties

Two-dimensional van der Waals heterostructures with strong intrinsic ferroelectrics are highly promising for novel devices with designed electronic properties. The polarization reversal transition of the 2D ferroelectric Ga2O3 monolayer offers a new approach to tune the photocatalytic and electrical properties of MoS2/Ga2O3 heterogeneous bilayers. In this work, we study MoS2/Ga2O3 heterogeneous bilayers with different intrinsic polarization using hybrid-functional calculations. We closely investigate the structural, electronic and optical properties of two stable stacking configurations with opposite polarization. The results reveal a distinct switch from type-I to type-II heterostructures owing to polarization reversal transition of the 2D ferroelectric Ga2O3 monolayer. Biaxial strain engineering leads to type-I-to-II and type-II-to-III transitions in the two polarized models, respectively. Intriguingly, one of the MoS2/Ga2O3 heterolayers has a larger spatial separation of the valence and conduction band edges and excellent optical absorption ranging from infrared to ultraviolet region under biaxial strain, thus ensuring promising novel applications such as flexible electrical and optical devices. Based on the highly tunable physical properties of the bilayer heterostructures, we further explore their potential applications, such as photocatalytic water splitting and field-controlled switch channel in MOSFET devices.

Automated summary

This study investigates the effects of polarization reversal transition of the 2D ferroelectric Ga2O3 monolayer on MoS2/Ga2O3 heterogeneous bilayers. The results demonstrate distinct changes in the heterostructures and excellent optical absorption under biaxial strain, indicating potential applications in flexible electrical and optical devices. The highly tunable physical properties of the bilayer heterostructures are also explored for photocatalytic water splitting and field-controlled switch channel in MOSFET devices.