Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 24, Issue 17, Pages 10210-10221Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d2cp00228k
Keywords
-
Funding
- Ankara University BAP research project [21B0443001]
Ask authors/readers for more resources
Two-dimensional materials have great potential in nanodevice applications but also have limitations. The increasing demand for novel two-dimensional materials has accelerated heterostructure studies. This paper investigates the effects of an external electric field and strain on a silicene/Ga2SeS heterostructure, finding that the device performance can be adjusted by tuning Janus 2D materials.
Two-dimensional materials are leading the way in nanodevice applications thanks to their various advantages. Although two-dimensional materials show promise for many applications, they have certain limitations. In the last decade, the increasing demand for the applications of novel two-dimensional materials has accelerated heterostructure studies in this field. Hence, restoring the combination of two-dimensional heterostructured materials has been reported. In this paper, we show that the effect of the external electric field and biaxial strain on the silicene/Ga2SeS heterostructure has a critical impact on the tuning of the Schottky barrier height. The findings such as the variation of the electronic band gap, interlayer charge transfer, total dipole moment, and n-type/p-type Schottky barrier transitions of the silicene/Ga2SeS heterostructure under external effects imply that the device performance can be adjusted with Janus 2D materials.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available