4.6 Article

Charge transfer complexes of a benzothienobenzothiophene derivative and their implementation as active layer in solution-processed thin film organic field-effect transistors

Journal

JOURNAL OF MATERIALS CHEMISTRY C
Volume 10, Issue 18, Pages 7319-7328

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d2tc00655c

Keywords

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Funding

  1. European Union's Horizon 2020 research and innovation programme under the Marie Skodowska-Curie grant [811284]
  2. Spanish Ministry [GENESIS PID2019-111682RB-I00, FUNFUTURE CEX2019-000917-S]
  3. Generalitat de Catalunya [2017-SGR-918]
  4. Consortium des Equipements de Calcul Intensif (CECI) - Fonds de la Recherche Scientifique de Belgique (F.R.S. - FNRS) [2.5020.11]
  5. FPU fellowship
  6. Belgian National Fund for Scientific Research (FNRS) [T.0072.18, 30489208]
  7. French Community of Belgium (ARC) [20061]
  8. University of Bologna (RFO-Scheme)
  9. European project FSE REACT EU - PON RI 2014-2020

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We report on the synthesis and structural characterization of novel charge transfer complexes between a benzothienobenzothiophene derivative and F(x)TCNQ derivatives. The degree of charge transfer and HOMO-LUMO gap energies were evaluated using spectroscopic methods and DFT calculations. Thin films of the complexes were prepared and their structures were identified using X-ray diffraction and IR/Raman spectroscopy. The films exhibited n-type behavior in organic field-effect transistor devices.
Herein, we report on the synthesis and structural characterization of novel charge transfer (CT) complexes of the benzothienobenzothiophene derivative C8O-BTBT-OC8 with the series of F(x)TCNQ derivatives (x = 2, 4). The degree of charge transfer and HOMO-LUMO gap energies were evaluated by spectroscopic means and by DFT calculations. Thin films of the (C8O-BTBT-OC8)(F(4)TCNQ) complex were prepared by a simple solution shearing technique and by blending the active materials with polystyrene. X-Ray diffraction and IR/Raman spectroscopy techniques were instrumental for the structural identification of the films, which belonged to the same phase as the resolved single crystal. The films were implemented as an active layer in organic field-effect transistor (OFET) devices, which exhibited an n-type behavior in ambient conditions in agreement with the theoretical calculations.

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