Journal
2022 IEEE 35TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS CONFERENCE (MEMS)
Volume -, Issue -, Pages 535-538Publisher
IEEE
DOI: 10.1109/MEMS51670.2022.9699533
Keywords
4H-SiC; silicon carbide; sun position sensors; UV photodetectors; wide bandgap semiconductors
Categories
Funding
- Dutch Technology Foundation (STW), Netherlands Organization for Scientific Research (NWO)
- Ministry of Economic Affairs [16247]
Ask authors/readers for more resources
This paper presents a quadrant sun position sensor microsystem device that operates in a field-of-view of +/- 33 degrees and achieves a mean error of 1.9 degrees in this range, using silicon carbide technology. This development enables the realization of an inherently visible blind sun position sensor in a CMOS compatible technology for the first time.
In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of +/- 33 degrees and reaches a mean error of 1.9 degrees in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of the photodetectors and CMOS readout circuitry on-chip is vital to compete with the performance of silicon state-of-the-art and for the concept to be adopted by industry, which is where previous implementations of visible blind sun sensors are lacking.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available