Journal
INTERNATIONAL JOURNAL OF THEORETICAL PHYSICS
Volume 61, Issue 5, Pages -Publisher
SPRINGER/PLENUM PUBLISHERS
DOI: 10.1007/s10773-022-05049-2
Keywords
Polaron; Semiconductor quantum dots; III-V compound semiconductors; Linear combination operator; Spin-orbit coupling effect
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Funding
- National Natural Science Foundation of China [12164032]
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This study investigates the ground state energy of weak coupling polarons confined in III-V compound semiconductor quantum dots. The results demonstrate that the ground state energy splits into two branches due to the Rashba spin-orbit coupling effect. The spin splitting spacing is influenced by the strength of the Rashba spin-orbit coupling and the coupling strength and effective mass of the III-V compound semiconductor material.
We study the ground state energy (GSE) of weak coupling polaron confined in quantum dots (QD) of III-V compound semiconductors using the linear combinatorial operator (LCO) and the Lee-Low-Pines unitary transformation (LLPUT) method. Our calculated results show that the GSE of the polaron splits into two branches due to the Rashba spin-orbit (SO) coupling effect, and spin splitting spacing is influenced by Rashba SO coupling strength and the coupling strength and the effective mass of III-V compound semiconductor material. That reveals the SO coupling properties of weak coupling polaron in the QD of III-V compound semiconductors, which provides a theoretical platform for the fabrication of nanometer devices.
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