Resistive switching characteristics of a single Zn-doped CuS nanoball anchored with multi-walled carbon nanotubes

We report a new synthesis method to grow Zn-doped CuS (CZS) nanoballs on multi-walled carbon nanotube (MWCNT) surfaces from a single molecular source [Cu(en)(2)ZnCl4]center dot DMSO complex. The single precursor acts as the source for both Cu+2 and Zn+2 ions for the formation of nanocrystalline balls. High resolution electron micrographs clearly revealed the formation of crystalline CZS nanoballs on the surface of MWCNT. The chemical composition and local bonding of CZS have been examined by XPS and UPS analysis. A current-voltage (I-V) characteristic on single CZS nanoballs was carried out using conducting probe atomic force microscopy (CAFM). A clear hysteresis in I-V characteristics demonstrated the bipolar resistive switching in the nanoballs anchored with MWCNTs at low set and reset voltages. The study reveals a novel technique to growdoped semiconductor nanocrystal for its application in resistive switching memory devices. (C) 2016 Elsevier Ltd. All rights reserved.