Journal
MATERIALS & DESIGN
Volume 101, Issue -, Pages 197-203Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.matdes.2016.03.160
Keywords
Resistive switching memory; Zn-doped CuS nanoball; Carbon nanotube; Conducting probe atomic force microscopy; Nanoscale memory devices
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Funding
- Council of Scientific and Industrial Research (CSIR) India [03(1275)/13/EMR-II]
- CSIR (India)
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We report a new synthesis method to grow Zn-doped CuS (CZS) nanoballs on multi-walled carbon nanotube (MWCNT) surfaces from a single molecular source [Cu(en)(2)ZnCl4]center dot DMSO complex. The single precursor acts as the source for both Cu+2 and Zn+2 ions for the formation of nanocrystalline balls. High resolution electron micrographs clearly revealed the formation of crystalline CZS nanoballs on the surface of MWCNT. The chemical composition and local bonding of CZS have been examined by XPS and UPS analysis. A current-voltage (I-V) characteristic on single CZS nanoballs was carried out using conducting probe atomic force microscopy (CAFM). A clear hysteresis in I-V characteristics demonstrated the bipolar resistive switching in the nanoballs anchored with MWCNTs at low set and reset voltages. The study reveals a novel technique to growdoped semiconductor nanocrystal for its application in resistive switching memory devices. (C) 2016 Elsevier Ltd. All rights reserved.
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