Journal
ACS APPLIED ELECTRONIC MATERIALS
Volume 4, Issue 4, Pages 2040-2046Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.2c00197
Keywords
second-harmonic generation; 2D ferroelectrics; hafnium oxide; thin films; nonlinear optics
Funding
- Italian Government [2017YCTB59]
- Spanish Ministry of Science and Innovation [CEX2019-000917-SMCIN, PID2020-112548RB-I00, PID2019-107727RB-I00]
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This study analyzes the interface-induced second-harmonic generation from ferroelectric hafnium-zirconium oxide thin films and finds that the signal mainly comes from the buffer side of the interface. Meanwhile, the ferroelectric film significantly affects the nonlinear optical properties of the underlying ferromagnetic buffer electrode. Possible mechanisms include oxygen migration, electrostatic effects, and modulation of the La0.67Sr0.33MnO3 magnetization by the upper ferroelectric film.
The interface-induced second-harmonic generation from ferroelectric hafnium-zirconium oxide (Hf0.5Zr0.5O2) epitaxial thin films, buffered with a La0.67Sr0.33MnO3 bottom electrode, is analyzed as a function of input and output polarization angles and the azimuthal angle of the sample for several film thicknesses. It is shown that the signal is generated mainly from the buffer side of the interface, rather than from the ferroelectric side. However, the ferroelectric film affects significantly the nonlinear optical properties of the underlying ferromagnetic buffer electrode. Several mechanisms accounting for these observations are discussed, from oxygen migration, to an electrostatic effect, including a possible modulation of the La0.67Sr0.33MnO3 magnetization by the upper ferroelectric film.
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