Journal
MATERIALS & DESIGN
Volume 92, Issue -, Pages 1046-1051Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.matdes.2015.12.092
Keywords
Spin reorientation; Spin transfer torque; Perpendicular magnetic random memory; Co/Ni multilayers; Composite layers
Categories
Ask authors/readers for more resources
Spin reorientation temperature (T-SR) is investigated in both layers, including Co/Ni multilayer and composite layer consisting of Co/Pt multilayer with CoFeB layer. The T-SR of both layers can be adjusted in a wide range, and the low T-SR is obtained in both layers. It is also suggested a writing method based on spin transfer torque (STT) with spin reorientation, for low current writing perpendicular magnetic random memory with high thermal stability. This method is to reorient the magnetization from a perpendicular to an in-plane state, which can be caused by Joule heating the MTJ with thermal barriers above T-SR by the injected current pulse. This polarized current can also produce the STT to push the magnetization toward a deterministic perpendicular direction from an in-plane state, when decreasing the magnitude of current pulse. Since the perpendicular anisotropy dominates magnetization switching during cooling, the critical current density is determined by the Joule heating for realization of spin reorientation in this writing method. Macrospin modeling shows the critical current density is 2 x 10(6) A/cm(2), which is two orders magnitude lower than that of conventional STT switching. This writing method can be applied to the perpendicular magnetic tunnel junction comprised of Co/Ni multilayer or composite layer. (C) 2015 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available