Journal
ACS APPLIED ELECTRONIC MATERIALS
Volume 4, Issue 3, Pages 1117-1123Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.1c01244
Keywords
oxide heterointerfaces; buffer layer; transport property; occupation of 3d orbital; spin orbit coupling effect
Funding
- National Natural Science Foundation of China [51572222]
- Key Research Project of the Natural Science Foundation of Shaanxi Province, China [2021JZ-08, 2020JM-088]
- Analytical and Testing Center of Northwestern Polytechnical University
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The electronic transport property at heterointerfaces is investigated by introducing buffer layers of lanthanum cobaltate with different thicknesses. The interfaces show a metal-to-insulator transition and the mobility is significantly enhanced by increasing the thickness. Two types of carriers at the interfaces are observed, accompanied by the spin-orbit coupling effect, which is attributed to the occupation of the 3d-orbit band of carriers. These findings have important implications for the application of oxide spintronic devices.
The two-dimensional electron gas at the interfaces of insulating oxides has been one of the hot issues contributing to the development of all-oxide devices. The introduced buffer layer at interfaces will produce some strange physical properties due to the broken space-reversal symmetry. Here, we investigate the electronic transport property at heterointerfaces by introducing buffer layers of lanthanum cobaltate with different thicknesses. It is found that the interfaces show a metal-to-insulator transition, and the mobility is enhanced by more than 1 order of magnitude upon increasing the thickness. More importantly, two types of carriers at the interfaces are observed, simultaneously accompanied by the spin-orbit coupling effect, which can be attributed to the occupation of the 3d-orbit band of carriers. These results show that the buffered materials at interfaces can be designed to tune the spin-orbit coupling effect and lay a foundation for further applications of oxide spintronic devices.
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