4.6 Article

Toward 100% Spin-Orbit Torque Efficiency with High Spin-Orbital Hall Conductivity Pt-Cr Alloys

Journal

ACS APPLIED ELECTRONIC MATERIALS
Volume 4, Issue 3, Pages 1099-1108

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.1c01233

Keywords

spin-orbit torques; spin Hall effects; orbital Hall effects; spintronics; SOT-MRAM; magnetic materials

Funding

  1. Ministry of Science and Technology of Taiwan (MOST) [MOST 109-2636-M-002-006]
  2. Center of Atomic Initiative for New Materials (AI-Mat)
  3. National Taiwan University from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan [NTU-108L9008]
  4. Taiwan Semiconductor Manufacturing Company (TSMC)

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The development of high spin-orbital Hall conductivity, giant damping-like SOT efficiency, and low power consumption SOT memory devices can be achieved through proper alloying.
5d transition metal Pt is the canonical spin Hall material for efficient generation of spin-orbit torques (SOTs) in Pt/ferromagnetic layer (FM) hetero-structures. However, for a long while with tremendous engineering endeavors, the damping-like SOT efficiencies (xi(DL)) of Pt and Pt alloys have still been limited to xi(DL) < 0.5. Here we present that with proper alloying elements, particularly 3d transition metals V and Cr, a high spin-orbital Hall conductivity (sigma(SH) approximate to 6.5 x 10(5) (h/2e) Omega(-1) m(-1)) can be developed. Especially for the Cr-doped case, an extremely high xi(DL) approximate to 0.9 in a Pt0.69Cr0.31/Co device can be achieved with a moderate Pt0.69Cr0.31 resistivity of rho(xx) approximate to 133 mu Omega cm. A low critical SOT-driven switching current density of J(c) approximate to 3.2 x 10(6) A cm(-2) is also demonstrated. The damping constant (a) of the Pt0.69Cr0.31/FM structure is also found to be reduced to 0.052 from the pure Pt/FM case of 0.078. The overall high sigma(SH), giant xi(DL), moderate rho(xx), and reduced a of such a Pt-Cr/FM heterostructure makes it promising for versatile extremely low power consumption SOT memory applications.

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