Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 10, Issue 22, Pages 8834-8844Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d2tc00904h
Keywords
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Funding
- China Scholarship Council (CSC) [202108160003]
- ERC-CZ program [LL2101]
- Ministry of Education Youth and Sports (MEYS)
- Specific university research FUNDING [A2_FCHT_2022_075]
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In this study, a broadband photodetector covering X-ray to visible range was successfully fabricated using a chemical vapor transport method to synthesize HgPSe3 single crystal. The detector exhibited high sensitivity under X-ray and excellent optoelectronic performance in the visible light range.
Light detection over a broad spectral range is essential for optoelectronic applications, including spectroscopy, communication sensing and industrial inspection. Even though a few materials can successfully achieve broadband photodetectors, wavelength regimes detected by these detectors are limited to the ultraviolet (UV) to infrared (IR) wavelength range. Furthermore, detection under X-rays remains extensively unexplored because of the lack of desirable materials. Herein, we pioneer a broadband photodetector based on a frontier layered HgPSe3 single crystal synthesized via chemical vapor transport, as its photodetection covers the X-ray to visible range. This high-quality single crystal is directly used for photodetectors with a facile architecture and achieves a high sensitivity (similar to 89 mu C Gy(-1) cm(-2)) under X-rays, which is about 4.5-fold that of a traditional alpha-Se-based X-ray detector. In the visible light range, the as-fabricated HgPSe3 crystal-based detector can achieve better eminent optoelectronic performance: a responsivity of 4 A W-1 at similar to 650 nm, a detectivity of 1.45 x 10(9) Jones and a relatively fast photoresponse time (0.49 s rise time under X-rays and 0.08 s rise time under similar to 650 nm). These results suggest the potential of the emerging layered thio- and selenophosphate materials for advanced optoelectronic applications.
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